Method for cleaning a process chamber

Details Method for cleaning a process chamber Method for cleaning a process chamber

1995-11-03

1997-12-02

McMahon, Timothy

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

13 12, 13 13, B08B 700

Patent

active

056931476

ABSTRACT:
Fluorocarbon and water vapor are introduced directly into a plasma in a process chamber, not downstream from the plasma, thereby creating HF vapor to clean the process chamber. The process may also be used to remove a photoresist residue left remaining on a semiconductor wafer.

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patent: 5198634 (1993-03-01), Mattson et al.
patent: 5348619 (1994-09-01), Bohannon et al.
patent: 5354962 (1994-10-01), Mizuno et al.
patent: 5382316 (1995-01-01), Hills et al.
Hawley's Condensed Chemical Dictionary, Van Nostrand Reinhold, 1993, p. 531.
J. Kikuchi et al., "Native Oxide Removal on Si Surfaces by NF.sub.3 -Added Hydrogen and Water Vapor Plasma Downstream Treatment", J. Appl. Phys., vol. 33, Apr. 1994, Japan, pp.2207-2211.
B. Bohannon et al., "Post Metal Etch Residue Removal Using Vapor Phase Processing Technology", Proceedings -Institute of Environmental Sciences, 1993, pp. 275-281.
S. Jimbo et al., "Resist and Sidewall Film Removal after A1 Reactive lon Etching (RIE) Employing F+H.sub.2 0 Downstream Ashing", J. Appl. Phys., vol. 32, 1993, Japan, pp. 3045-3050.

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