Method for cleaning a polysilicon fraction

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

Reexamination Certificate

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C134S003000, C134S025400, C134S026000, C134S028000, C134S032000, C134S033000, C134S035000, C134S036000, C134S041000, C134S042000, C134S902000

Reexamination Certificate

active

07736439

ABSTRACT:
The present invention relates to a method for cleaning polycrystalline silicon fragments to a metal content of <100 ppbw, wherein a polysilicon fraction is added to an aqueous cleaning solution containing HF and H2O2, this aqueous cleaning solution is removed and the polycrystalline fraction thereby obtained is washed with highly pure water and subsequently dried.

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patent: 2004/0045574 (2004-03-01), Tan
patent: 2006/0070569 (2006-04-01), Andrejewski et al.
patent: 195 29 518 (1996-02-01), None
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patent: 05-004811 (1993-01-01), None
patent: 11-176784 (1999-07-01), None
patent: WO03105209 (2003-12-01), None
Patent Abstract corresponding to JP 11-176784.
Patbase abstract corresponding to DE 195 29 518 A1.
US 5,846,921 is corresponding to DE 198 17 486 A1.

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