Method for cleaning a plasma chamber

Details Method for cleaning a plasma chamber Method for cleaning a plasma chamber

2005-08-09

2005-08-09

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Hollow work, internal surface treatment

C134S001100, C134S021000, C134S022100, C134S026000, C134S030000, C134S902000, C438S905000

Reexamination Certificate

active

06926014

ABSTRACT:
A method for cleaning a plasma chamber after metal etching. First, a substrate having a metal layer thereon is placed in a plasma chamber. Next, the metal layer is etched. Finally, the substrate is removed from the plasma chamber to perform a dry cleaning which includes the following steps. First, the inner wall of the plasma chamber is cleaned by plasma etching using oxygen as a process gas. Next, the top and bottom electrode plates in the plasma chamber are cleaned by plasma etching using chlorine and boron chloride as process gases. Next, the inner wall of the plasma chamber is cleaned again by plasma etching using sulfur hexafluoride and oxygen as process gases. Finally, oxygen and helium used as purging gases are injected into the plasma chamber and exhausted from therein.

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