Method for cleaning a photomask

Details Method for cleaning a photomask Method for cleaning a photomask

2008-05-27

2008-05-27

Carrillo, Sharidan (Department: 1792)

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

C134S002000, C134S003000, C134S019000, C134S027000, C134S028000, C134S029000, C134S030000, C134S034000, C134S035000, C134S036000, C134S041000, C134S042000, C134S902000

Reexamination Certificate

active

07377984

ABSTRACT:
Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof and to induce curing and oxidation of Cr and MoSiON layers, thereby preventing diffusion of the ions. Etching of Cr and MoSiON layers due to a cleaning process is suppressed in order to significantly reduce a change in phase and transmissivity of optical properties of Cr and MoSiON.

REFERENCES:
patent: 6071376 (2000-06-01), Nagamura et al.
patent: 6162565 (2000-12-01), Chao et al.
patent: 6209553 (2001-04-01), Nagamura et al.
patent: 6632289 (2003-10-01), Masui et al.
patent: 2002/0155360 (2002-10-01), Tange et al.
patent: 2003/0181055 (2003-09-01), Wu et al.
patent: 2005/0026435 (2005-02-01), Chen et al.
patent: 2006/0137717 (2006-06-01), Lee

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