Method for cleaning a multilayer substrate and method for...

Details Method for cleaning a multilayer substrate and method for... Method for cleaning a multilayer substrate and method for...

2004-09-07

2009-10-27

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S745000, C438S750000, C134S001200

Reexamination Certificate

active

07608548

ABSTRACT:
Disclosed is a method for cleaning a multilayer substrate at least having a silicon single crystal wafer with a SiGe layer epitaxially grown on a surface of the silicon single crystal wafer, where the SiGe layer is an outermost surface of the SiGe layer and then cleaning the multilayer substrate with a first cleaning liquid capable of etching the protective film so that the protective film remains. The protective film prevents roughening of the surface of the SiGe layer while the cleaning is performed. The cleaning is performed. The cleaning is performed so that a thickness of the remaining protective film is from 1 nm to 100 nm.

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Alok Sareen et al., “Effect of Si cap layer on parasitic channel operation in Si/SiGe metal-oxide-semiconductor structures”, Journal of Applied Physics, vol. 93, No. 6, pp. 3545-3552, Mar. 15, 2003.

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