Method for cleaning a gate stack

Details Method for cleaning a gate stack Method for cleaning a gate stack

2008-07-08

2008-07-08

Tran, Binh X (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S750000, C438S753000, C438S754000

Reexamination Certificate

active

10313283

ABSTRACT:
A method of making a semiconductor structure, comprises cleaning a gate stack with a cleaning solution. The gate stack comprises a gate layer, a metallic layer on the gate layer, and a etch-stop layer on the metallic layer. The gate layer is on a semiconductor substrate, the cleaning solution is a non-oxidizing cleaning solution, and the metallic layer comprises an easily oxidized metal.

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