Method for cleaning a deposition chamber and deposition...

Cleaning and liquid contact with solids – Processes – Using sequentially applied treating agents

Reexamination Certificate

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C134S031000, C438S905000

Reexamination Certificate

active

10734479

ABSTRACT:
Disclosed are a method for cleaning a deposition chamber by removing attached metal oxides, and a deposition apparatus for performing in situ cleaning. A first gas and a second gas are provided into the deposition chamber. The first gas is reacted with metal included in the metal oxide to generate reacting residues. The second gas then decomposes the reacting residues, and the decomposed residues are exhausted out of the chamber. Thus, this cleaning process can be rapidly accomplished while the deposition chamber is not opened or separated from a deposition apparatus.

REFERENCES:
patent: 5647953 (1997-07-01), Williams et al.
patent: 5679215 (1997-10-01), Barnes et al.
patent: 5709757 (1998-01-01), Hatano et al.
patent: 6082375 (2000-07-01), Gealy et al.
patent: 6610211 (2003-08-01), Gealy et al.
patent: 6659111 (2003-12-01), Mouri et al.
patent: 09-148255 (1997-06-01), None
patent: 11-222679 (1999-08-01), None
patent: 11222679 (1999-08-01), None
patent: 2000-143213 (2000-05-01), None
English language abstract of Japanese Publication No. 09-148255.
English language abstract of Japanese Publication No. 11-222679.
English language abstract of Japanese Publication No. 2000-143213.
English language Abstract from Japanese Patent Publication No. JP11222679 published Aug. 17, 1999.

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