Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2006-07-04
2006-07-04
Stein, Stephen (Department: 1775)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S255395, C427S294000, C427S295000, C427S314000, C427S376200, C427S398400, C427S585000, C427S588000
Reexamination Certificate
active
07070833
ABSTRACT:
A method of passivating the surface of a substrate to protect the surface against corrosion, the surface effects on a vacuum environment, or both. The substrate surface is placed in a treatment environment and is first dehydrated and then the environment is evacuated. A silicon hydride gas is introduced into the treatment environment, which may be heated prior to the introduction of the gas. The substrate and silicon hydride gas contained therein are heated, if the treatment environment was not already heated prior to the introduction of the gas and pressurized to decompose the gas. A layer of silicon is deposited on the substrate surface. The duration of the silicon depositing step is controlled to prevent the formation of silicon dust in the treatment environment. The substrate is then cooled and held at a cooled temperature to optimize surface conditions for subsequent depositions, and the treatment environment is purged with an inert gas to remove the silicon hydride gas. The substrate is cycled through the silicon depositing step until the surface of the substrate is covered with a layer of silicon. The treatment environment is then evacuated and the substrate cooled to room temperature.
REFERENCES:
patent: 4173661 (1979-11-01), Bourdon
patent: 4579752 (1986-04-01), Dubois et al.
patent: 4671997 (1987-06-01), Galasso et al.
patent: 4714632 (1987-12-01), Cabrera et al.
patent: 5299731 (1994-04-01), Liyanage et al.
patent: 5480677 (1996-01-01), Li et al.
patent: 6444326 (2002-09-01), Smith
patent: 6511760 (2003-01-01), Barone et al.
Barone Gary A.
Higgins Martin E.
Kendall Bruce R. F.
Lavrich David J.
Smith David A.
Bonini, Jr. Frank J.
Earley III John F. A.
Harding Earley Follmer & Frailey
Restek Corporation
Speer Timothy M.
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