Method for chemical vapor deposition capable of preventing...

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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C427S255230, C118S715000

Reexamination Certificate

active

07485339

ABSTRACT:
A method for chemical vapor deposition (CVD) comprises injecting a purge gas into a reaction chamber where substrates are located; and supplying a source material of vapor phase participating directly in forming a film on the substrates to an inside of the reaction chamber, thus forming a protective curtain in the inside of the reaction chamber by a mutual diffusion-suppressing action between the purge gas and source material.

REFERENCES:
patent: 4661199 (1987-04-01), Looney et al.
patent: 4684542 (1987-08-01), Jasinski et al.
patent: 4753192 (1988-06-01), Goldsmith et al.
patent: 5273588 (1993-12-01), Foster et al.
patent: 5439524 (1995-08-01), Cain et al.
patent: 5540800 (1996-07-01), Qian
patent: 5792261 (1998-08-01), Hama et al.
patent: 5814561 (1998-09-01), Jackson
patent: 5851589 (1998-12-01), Nakayama
patent: 5953630 (1999-09-01), Maeda et al.
patent: 6033480 (2000-03-01), Chen
patent: 6096135 (2000-08-01), Guo
patent: 6097133 (2000-08-01), Shimada
patent: 6113705 (2000-09-01), Ohashi
patent: 6301434 (2001-10-01), McDiarmid et al.
patent: 6444039 (2002-09-01), Nguyen
patent: 2006/0263522 (2006-11-01), Byun
patent: 60-0340101 (1985-02-01), None
patent: 1-187809 (1989-07-01), None
patent: 1-286306 (1989-11-01), None
patent: 06-163439 (1994-06-01), None
patent: 09-283459 (1997-10-01), None
patent: 11-200035 (1999-07-01), None
patent: 1998-052922 (1998-09-01), None
Deng, Xunming et al., “Hot-wire deposition of amorphous and microcrystalline silicon using different gas excitations by a coiled filament”. Thin Solid Films, vol. 430, Issues 1-2, Apr. 22, 2003, pp. 304-308.

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