Method for chemical-mechanical polish control in...

Abrading – Precision device or process - or with condition responsive... – Computer controlled

Reexamination Certificate

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C451S010000, C451S041000, C700S097000, C700S121000

Reexamination Certificate

active

06884147

ABSTRACT:
A method for planarizing the surface of a semiconductor wafer or device during manufacture. Dependencies of polish rate and substrate thickness on process parameters of downforce and polish speed, and on the characteristic product high feature area on the wafer, are explicitly defined and used to control Chemical-Mechanical Polish in Run-to-Run and real-time semiconductor production control applications.

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patent: 6625513 (2003-09-01), Lymberopoulos et al.
patent: 6676492 (2004-01-01), Li
patent: 6720266 (2004-04-01), Hofmann et al.

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