Method for characterizing mask defects using image...

Optics: measuring and testing – Inspection of flaws or impurities – Surface condition

Reexamination Certificate

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C356S237100, C430S005000, C382S145000

Reexamination Certificate

active

10783520

ABSTRACT:
The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo—Si multilayer mirrors. Repairing Mo—Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo—Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

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