Method for changing electrically programmable read-only memory d

Details Method for changing electrically programmable read-only memory d Method for changing electrically programmable read-only memory d

1997-07-03

1998-11-17

Le, Vu A.

Static information storage and retrieval

Floating gate

Particular biasing

36518519, 36518526, G11C 700

Patent

active

058386173

ABSTRACT:
A process for introducing negative charge onto the floating gate of an EPROM or EEPROM device is disclosed. The process uses CHISEL conditions to introduce charge onto the floating gate. The threshold voltage of the device is controlled by selecting a control gate voltage during programming that is less than 10 volts and that will provide a device with the desired threshold voltage. The device is then programmed using the selected control gate voltage and a negative substrate bias.

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