Method for cathodic sputtering including suppressing temperature

Details Method for cathodic sputtering including suppressing temperature Method for cathodic sputtering including suppressing temperature

1975-05-09

1976-08-31

Tung, T.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1500

Patent

active

039779556

ABSTRACT:
In a vacuum system for subjecting a workpiece such as a semiconductor wafer to a beam of energy, for example as in cathodic sputtering, temperature rise of the workpiece is inhibited by mounting the workpiece in minimal thermal contact with the support structure, and orienting it so that the back surface of the workpiece, that is, the face opposite to that upon which the energy beam impinges, is directed to a black body or low temperature portion of the vacuum chamber. In combination with this technique, the back surface is suitably treated to increase its emissivity such as, for example, by applying thereto a black coating.

REFERENCES:
patent: 3330752 (1967-07-01), Hallen et al.
patent: 3502562 (1970-03-01), Humphries
patent: 3616401 (1971-10-01), Cunningham et al.
patent: 3620808 (1971-11-01), Monroe, Jr.
patent: 3630873 (1971-12-01), Moore et al.
patent: 3711327 (1973-01-01), Blumenthal et al.
patent: 3779891 (1973-12-01), Vegh et al.
L. Maissel, Editor, "Handbook of Thin Film Technology," McGraw-Hill, N. Y. (1970), pp. 4-15, 4-16.

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