Method for carrying out a rule-based optical proximity...

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S005000, C430S296000, C430S942000

Reexamination Certificate

active

06902854

ABSTRACT:
Lithographic fabrication of a microelectronic component is performed with the aid of OPC and a scatter bar structure. At least one scatter bar in applied on a mask in addition to a main structure for the purpose of a subsequent imaging of the main structure from the mask onto a substrate by exposure. At leant one correction value for the OPC is selected in a particular manner in dependence upon a spacing between two parts of the main structure or spacing between neighboring main structures and the presence of a scatter bar between the two parts of the main structure. The manner in which the correction value is defined is determined by so forming an auxiliary quantity for each scatter bar, that the largest auxiliary quantity that is set is less than the smallest spacing between the parts of the main structure, so that in a program for OPC the presence of a scatter bar between the two parts of the main structure is suggested. In this way, correction values for a rule-based OPC method are flexibly defined even in the presence of scatter bars.

REFERENCES:
patent: 5242770 (1993-09-01), Chen et al.
patent: 5885747 (1999-03-01), Yamasaki et al.
patent: 6472108 (2002-10-01), Lin
patent: 6482559 (2002-11-01), Lin

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