Method for capturing gaseous impurities and semiconductor device

Details Method for capturing gaseous impurities and semiconductor device Method for capturing gaseous impurities and semiconductor device

1997-05-23

1999-01-26

Beck, Shrive

Coating processes

Interior of hollow article coating

Coating by vapor, gas, mist, or smoke

4272481, C23C 1624

Patent

active

058636021

ABSTRACT:
Before an HSG-Si film is formed, silicon films are pre-coated on the inner wall of a reaction chamber (12) for forming the HSG-Si film on a wafer (14) and in a boat (25) which is used for accommodate and support the wafer (14) in the reaction chamber (12), and then the wafer (14) is fed into the pre-coated reaction chamber (12) to form the HSG-Si film in the state that impurities on the wafer (14) have been removed. By pre-coating the silicon films, the impurities such as water, oxygen, hydrocarbon and organic materials can be removed, and a surface area increase rate of the HSG-Si film formed on the wafer (14) can be improved.

REFERENCES:
patent: 4428975 (1984-01-01), Dahm et al.
patent: 4650698 (1987-03-01), Moriya et al.
patent: 5663090 (1997-09-01), Dennison et al.
British Search Report dated Aug. 19, 1997.

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