Method for capping copper in semiconductor devices

Details Method for capping copper in semiconductor devices Method for capping copper in semiconductor devices

1994-04-01

1995-09-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437196, 437198, H01L 2144, H01L 2148

Patent

active

054478871

ABSTRACT:
A silicon nitride layer (34) has improved adhesion to underlying copper interconnect members (30) through the incorporation of an intervening copper silicide layer (32). Layer (32) is formed in-situ with a plasma enhanced chemical vapor deposition (PECVD) process for depositing silicon nitride layer (34). To form layer (32), a semiconductor substrate (12) is provided having a desired copper pattern formed thereon. The copper pattern may include copper interconnects, copper plugs, or other copper members. The substrate is placed into a PECVD reaction chamber. Silane is introduced into the reaction chamber in the absence of a plasma to form a copper silicide layer on any exposed copper surfaces. After a silicide layer of a sufficient thickness (for example, 10 to 100 angstroms) is formed, PECVD silicon nitride is deposited. The copper silicide layer improves adhesion, such that silicon nitride layer is less prone to peeling away from underlying copper members.

REFERENCES:
patent: 4910169 (1990-03-01), Hoshino
Hymes, S., et al. "Passivation of Copper by Silicide de Formation in dilute Silane" J. Appl. Phys. 71(9) pp. 4623-4625 (1 May 1992), (abstract).
B. Rogers, et al. "Issues in a Submicron Cu Interconnect System" 1991 Proc. 8th International IEEE VLSI multilevel Interconnect Conf. (Jun. 11-12, 1991).
Chin-An Chang et al., "Reaction between Cu and TiSi2 across different barrier layers", Appl. Phys. Lett. vol. 57, No. 6, Aug. 6, 1990 American Institute of Physic, pp. 617-619.
A. Cros et al., "Formation, oxidation, electronic and electrical properties of copper silicides", J. Appl. Phys., vol. 67, No. 7, Apr. 1, 1990, pp. 3328-3336.
B. Luther et al., "Planar Copper-Polyimide Back End Of The Line Interconnections For ULSI Devices", Jun. 8-9, 1993 VLSI Multilevel Interconnect Conference, pp. 15-20.
James S. H. Cho et al., "Reliability of CVD Cu Buried Interconnections", 1993 IEEE/IEDM, pp. 265-267.
Yasuo Takahashi et al., "New platinum sillicide formation method using reaction between platinum and silane", J. Appl. Phys. vol. 58, No. 8, Oct. 15, 1985, 1985 American Institute of Physics, pp. 3190-3194.

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