Method for capping a MEMS wafer

Details Method for capping a MEMS wafer Method for capping a MEMS wafer

2009-05-19

2011-11-15

Lebentritt, Michael (Department: 2829)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Having enclosed cavity

C156S089110, C065S031000, C065S036000, C065S042000, C065S043000, C065S058000

Reexamination Certificate

active

08058144

ABSTRACT:
A method for capping a MEMS wafer to form a hermetically sealed device. The method includes applying a glass bonding agent to the cap wafer and burning off organic material in the glass bonding agent. The cap wafer/glass bonding agent combination is then cleaned to reduce lead in the combination. The cleaning is preferably accomplished using an oxygen plasma. The MEMS device is coated with a WASA agent. The cap wafer is then bonded to the MEMS wafer by heating this combination in a capping gas atmosphere of hydrogen molecules in a gas such as nitrogen, argon or neon. This method of capping the MEMS wafer can reduce stiction in the MEMS device.

REFERENCES:
patent: 6621158 (2003-09-01), Martin et al.
patent: 6815071 (2004-11-01), Baney et al.
patent: 7364942 (2008-04-01), Martin
patent: 2001/0034076 (2001-10-01), Martin
patent: 2003/0073292 (2003-04-01), Bartlett et al.
patent: 2005/0058841 (2005-03-01), Baney et al.
patent: 2007/0238262 (2007-10-01), Summers
patent: 2008/0003436 (2008-01-01), Haack et al.

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