Method for calibrating the temperature of an epitaxy reactor

Details Method for calibrating the temperature of an epitaxy reactor Method for calibrating the temperature of an epitaxy reactor

1997-01-30

1999-11-30

Paschall, Mark

Electric heating

Heating devices

With power supply and voltage or current regulation or...

219494, 219505, 324719, 392416, 374102, H05B 102

Patent

active

059946768

ABSTRACT:
A method for calibrating the temperature of an epitaxy reactor includes the steps of preparing a reference wafer having undergone on at least one of its surfaces an implant of a doping followed by an activation annealing to form a diffused layer; measuring the sheet resistance of the diffused layer at one point on the surface of the wafer; placing the reference wafer in the epitaxy reactor, the reactor being set at a desired temperature and having a neutral gas flowing therein; and measuring the sheet resistance at the same point and calculating the difference between the two values of sheet resistance, this difference representing the thermal cycle undergone by the reference wafer during its stay in the epitaxy reactor.

REFERENCES:
patent: 4632057 (1986-12-01), Price et al.
patent: 5114242 (1992-05-01), Gat et al.
patent: 5305417 (1994-04-01), Naim et al.
patent: 5396184 (1995-03-01), Frank et al.
French Search Report from French Patent Application 96 011369, filed Jan. 31, 1996.
Patent Abstracts of Japan, vol. 17, No. 25 (C-1017), Jan. 18, 1993 & JP-A 04 247870 (Hitachi Ltd).
Patent Abstracts of Japan, vol. 8, No. 4 ((E-220), Jan. 10, 1984 & JP-A-58 169906 (Nippon Denki).

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