Method for calibrating an optoelectronic device based on APD...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C327S513000, C361S093800

Reexamination Certificate

active

10899904

ABSTRACT:
Methods and processes are disclosed for calibrating optoelectronic devices, such as optoelectronic transceivers and optoelectronic receivers, based upon an avalanche photodiode breakdown voltage. In general, the method involves adjusting a reverse-bias voltage of the avalanche photodiode until avalanche breakdown of the avalanche photodiode occurs. An optimized APD reverse-bias voltage is then determined by reducing the reverse-bias voltage at which avalanche breakdown occurs by a predetermined offset voltage. This process is performed at a variety of different temperatures. Information concerning each temperature and the corresponding optimized APD reverse-bias voltage is stored in a memory of the optoelectronic device.

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