Method for burying low resistance material in a contact hole

Details Method for burying low resistance material in a contact hole Method for burying low resistance material in a contact hole

1994-09-08

1995-05-30

Quach, T. N.

Fishing, trapping, and vermin destroying

437195, 437200, 437203, 748DIG19, H01L 2128, H01L 21768

Patent

active

054200741

ABSTRACT:
In a method for burying a contact hole according to the present invention, first, a polycrystalline silicon film is formed on a region including a contact hole. Impurities are introduced into the polycrystalline silicon film. Next, a metal film is formed on the polycrystalline silicon film. Next, a polycrystalline silicon film is formed on the metal film. Impurities are introduced into the polycrystalline silicon film. Next, a metal film is formed on the polycrystalline silicon film. A polycrystalline silicon film is formed on the metal film, and the contact hole is completely buried. Thereafter, a heat treatment is performed, thereby the impurities are diffused to the above two polycrystalline silicon films and all or a part of the metal film is changed to a metal silicide film. Next, an etchback is performed, thereby the polycrystalline silicon film and the metal silicide film are kept in only the contact hole.

REFERENCES:
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patent: 4833519 (1989-05-01), Kawano et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 4977098 (1990-12-01), Yu et al.
Kozicki, M., et al., "Silicide formation on Polysilicon . . . ", J. Electrochem. Soc., vol. 136, No. 3, Mar. 1989, pp. 878-881.

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