Method for burying a step in a semiconductor substrate

Details Method for burying a step in a semiconductor substrate Method for burying a step in a semiconductor substrate

1987-08-06

1988-08-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437238, 437229, 1566611, H01L 2176

Patent

active

047644834

ABSTRACT:
Disclosed is a method for burying a step in a semiconductor substrate in which (1) SiO.sub.2 layer is formed on a lower part of the step, (2) photoresist layer with equal thickness to the height of the step on the SiO.sub.2 layer at a portion corresponding to the lower part of the step, (3) sputter-SiO.sub.2 layer is formed by sputtering on the photoresist layer and SiO.sub.2 layer, (4) another photoresist layer is formed on the sputter-SiO.sub.2 layer, (5) the another photoresist layer and sputter-SiO.sub.2 layer are removed, and (6) the SiO.sub.2 layer and photoresist layer are removed. By this method, semiconductor substrate with flatness of within 50 nm in a 6-inch wafer can be obtained.

REFERENCES:
patent: 3976524 (1976-08-01), Feng
patent: 4274909 (1981-06-01), Venkataraman
patent: 4389281 (1983-06-01), Anantha et al.
patent: 4402851 (1983-10-01), Kurasawa et al.
patent: 4505025 (1985-03-01), Kurasawa et al.
patent: 4506434 (1985-05-01), Ogawa et al.
patent: 4662986 (1987-05-01), Lim

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