Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2007-06-19
2007-06-19
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S612000, C438S106000, C257SE21229, C257SE21509
Reexamination Certificate
active
11134600
ABSTRACT:
Method of making a bumped thinned circuit wafer includes providing a silicon circuit wafer, and providing a conductive layer on it. Then, a first temporary support, such as a handle wafer, may be attached by an acrylic bond. The circuit wafer may then be thinned to a desired thickness, and the thinned circuit attached to a second temporary support, such as a transfer wafer. The handle wafer is removed, the thinned circuit wafer is bumped, and further processing steps may be carried out while the bumped thinned circuit wafer is still attached to the transfer wafer. When the desired processing steps are complete, the transfer wafer is removed, and the thinned circuit wafer with relatively thick solder bumps results.
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Brown Terrence L. B.
Nhu David
Shlesinger & Arkwright & Garvey LLP
The United States of America as represented by the National Secu
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