Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Patent
1999-03-12
2000-10-03
Fourson, George
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
438406, 438459, H01L 21762
Patent
active
061272434
ABSTRACT:
The invention relates to a method for bonding two wafers, in which the wafers are placed over one another in such a way that a first surface of one wafer lies over a first surface of the other wafer. Trenches are introduced into at least one of the first surfaces. The trenches run in the plane of the surfaces. The wafers lying one on top of the other are then subjected to a heat treatment in an oxidizing atmosphere.
REFERENCES:
patent: 3902936 (1975-09-01), Price
patent: 4883215 (1989-11-01), Goesele et al.
patent: 5238865 (1993-08-01), Eguchi
patent: 5573972 (1996-11-01), Kobayashi
patent: 5807783 (1998-09-01), Gaul et al.
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5937312 (1999-10-01), Iyer et al.
Kissinger, W., et al., "Microstructures for Perfect Wafer Bonding in Different Temperature Ranges", Extended Abstracts of the Electrochemical Society, Fall Meeting, p. 681, Oct. 1991.
"Silicon Carbide Water Bonding", Q.-Y. Tong et al., J. Electrochem.Soc., vol. 142, No. 1, Jan. 1995, pp. 232-236.
Hassa Oliver
Tihanyi Jenoe
Werner Wolfgang
Fourson George
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
Stemer Werner H.
LandOfFree
Method for bonding two wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for bonding two wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for bonding two wafers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-194776