Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-12-02
2009-06-23
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C257SE21122
Reexamination Certificate
active
07550366
ABSTRACT:
A method for bonding of substrates has a steps of irradiating surfaces of the substrates respectively in a vacuum with both an inert gas beam and a metal beam thereby forming island shaped thin metal films on the surfaces of the substrates, and surface-activated bonding of the substrates through the island shaped thin metal films by contacting the surfaces of the substrates each other.
REFERENCES:
patent: 4875284 (1989-10-01), Ogata et al.
patent: A-10-092702 (1998-04-01), None
Official Notice of Reason for Refusal issued in connection to Japanese Patent Application No. 2003-137882, Oct. 4, 2005.
Hideki Takagi, Ryunosuke Maeda, Tadatomo Suga, “Room-temperature bonding of wafers made of different materials by using a metal film as intermediate layer”, Proceeding of the 2001 Autumn Conference of the Japan Society of Precision Engineering, Japan, the Japan Society of Precision Engineering, Sep. 10, 2001, p. 607.
Abe Tomoyuki
Howlader Mohammad Matiar Rahman
Suga Tadatomo
Ayumi Industry
Coleman W. David
Fox Rothschild LLP
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