Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-09-20
2005-09-20
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S105000
Reexamination Certificate
active
06946363
ABSTRACT:
A method for bonding diamond heat distribution structures to integrated circuit packages using optical contacting. In one embodiment, a heat spreader comprising diamond slab has a flat contact surface which is polished to a high degree of smoothness. An integrated circuit's package also has a flat contact surface which is polished to a high degree of smoothness. The contact surfaces of the diamond slab and the package are thoroughly cleaned and are then placed in contact with each other, establishing an optical contact bond between them. In one embodiment, the contact surfaces of the diamond and package which are to be bonded together are first polished, then a layer of an intermediate material such as silicon carbide is deposited on the polished surfaces. The silicon carbide layers on the contact surfaces are cleaned and placed in contact with each other to establish an optical contact bond. If desired, the silicon carbide layers on the contact surfaces may be activated with a substance such as hydrogen fluoride to promote bonding.
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International Search Report, application No. PCT/US 01-07874, mailed Nov. 22, 2001.
Kivlin B. Noäl
Meyertons Hood Kivlin Kowert & Goetzel P.C.
Nguyen Tuan H.
Sun Microsystems Inc.
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