Method for bonding semiconductor wafers and method for...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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C438S109000, C438S455000, C438S456000, C438S459000, C257SE21705, C257SE21597

Reexamination Certificate

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08039305

ABSTRACT:
In a method for bonding semiconductor wafers of the present invention, a bonding layer containing a flux-active curing agent and a thermosetting resin is interposed between a first semiconductor wafer and a second semiconductor wafer, thereby producing a semiconductor wafer stacked body in which the first and second semiconductor wafers are stacked together, and then the semiconductor wafer stacked body is compressed in a thickness direction thereof while heating it so that the first and second semiconductor wafers are fixed together by melting and solidifying solder bumps while curing the thermosetting resin, thereby producing a semiconductor wafer bonded body in which first connector portions and second connector portions are electrically connected together through solidified products obtained by melting and solidifying the solder bumps.

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Supplementary European Search Report for Application No. EP 08 75 2033 dated May 11, 2010.
International Search Report mailed Jun. 10, 2008 for International Application No. PCT/JP2008/057934.

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