Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-04-12
2011-04-12
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23023, C257SE21480, C438S455000
Reexamination Certificate
active
07923841
ABSTRACT:
A method for bonding a semiconductor structure with a substrate and a high efficiency photonic device manufactured by using the same method are disclosed. The method comprises steps of: providing a semiconductor structure and a substrate; forming a composite bonding layer on the semiconductor structure; and bonding the substrate with the composite bonding layer on the semiconductor structure to form a composite alloyed bonding layer. The semiconductor structure includes a compound semiconductor substrate and a high efficiency photonic device is produced after the compound semiconductor substrate is removed. Besides, the composite bonding layer can be formed on the substrate or formed on both the semiconductor structure and substrate simultaneously.
REFERENCES:
patent: 4626322 (1986-12-01), Switzer
patent: 2010/0019222 (2010-01-01), Yan et al.
Coleman W. David
Muncy Geissler Olds & Lowe, PLLC
RGB Consulting Co., Ltd.
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