Method for bonding compounds semiconductor wafers to create an o

Details Method for bonding compounds semiconductor wafers to create an o Method for bonding compounds semiconductor wafers to create an o

1997-04-14

1998-07-21

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

H01L 2922

Patent

active

057834776

ABSTRACT:
A method for forming an ohmic interface between unipolar (isotype) compound semiconductor wafers without a metallic interlayer and the semiconductor devices formed with these ohmic interfaces are disclosed. The ohmic interface is formed by simultaneously matching the crystallographic orientation of the wafer surfaces and the rotational alignment within the surfaces of the two wafers and then subjecting them to applied uniaxial pressure under high temperatures to form the bonded ohmic interface. Such an ohmic interface is required for the practical implementation of devices wherein electrical current is passed from one bonded wafer to another.

REFERENCES:
patent: 4315591 (1982-02-01), Houston
patent: 5236118 (1993-08-01), Bower et al.
patent: 5654583 (1997-08-01), Okuno et al.
Okuno, Yae; Uomi, Kaz; Aoki, Masahiro; Tsuchiya, Tomonobu. "Direct Wafer Bonding of III-V Compound Semiconductors for Free-Material and Fee Orientation Integration." IEEE Journal of Quantum Electronics, vol. 33, No. 6, Jun. 1997.
Okuno, Yae. "Investigation on Direct Bonding of III-V Semiconductor Wafers with Lattice Mismatch and Orientation Mismatch." Applied Physics Letters vol. 68, No. 20, May 13, 1996.

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