Method for BARC over-etch time adjust with real-time process...

Details Method for BARC over-etch time adjust with real-time process... Method for BARC over-etch time adjust with real-time process...

2005-12-27

2005-12-27

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

C438S725000, C430S299000, C716S030000

Reexamination Certificate

active

06979648

ABSTRACT:
A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CDresistof the patterned photoresist is measured and a first wafer with median values chosen (101) from a lot. A first time t* is found (102) and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time tlotis found (104). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot (106).

REFERENCES:
patent: 5846878 (1998-12-01), Horiba
patent: 5962195 (1999-10-01), Yen et al.
patent: 6350390 (2002-02-01), Liu et al.
patent: 6606738 (2003-08-01), Bell et al.
patent: 6708073 (2004-03-01), Heavlin
patent: 2004/0074869 (2004-04-01), Wang et al.

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