Method for autostoichiometric chemical vapor deposition

Details Method for autostoichiometric chemical vapor deposition Method for autostoichiometric chemical vapor deposition

1994-11-23

1999-01-05

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272551, 4272481, C23C 1600

Patent

active

058559566

ABSTRACT:
The chemical vapor deposition of a single phase of a double metal oxide having a stoichiometric ratio results in a fully dense film. The film is deposited by polycondensation of a partially hydrolyzed precursor reacted from water vapor mixed with a volatile, metalorganic precursor having the desired stoichiometric ratio. The film may be annealed to form a perfect crystal of stoichiometric, single phase, double metal oxide having substantially improved optical characteristics for laser light transmission and other electro-optical applications.

REFERENCES:
patent: H1170 (1993-04-01), Purdy
patent: 4888203 (1989-12-01), Rothschild et al.
patent: 5213844 (1993-05-01), Purdy
Sladek et al, "Low Temperature metal oxide deposition by alkoxide hydrolysis", Proceedings of the International Conference on Chemical Vapor Deposition (3rd), Salt Lake City, Utah, 24-27 Apr. 1972, pp. 215-231.

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