Method for automatic measurement of failure in subthreshold...

Details Method for automatic measurement of failure in subthreshold... Method for automatic measurement of failure in subthreshold...

2007-12-25

2007-12-25

Nguyen, Ha Tran (Department: 2829)

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

C702S066000

Reexamination Certificate

active

11320682

ABSTRACT:
A method for detecting an abnormal condition of a MOS transistor in a subthreshold region. The method includes measuring a variation in a drain current with respect to a variation of a gate voltage of the MOS transistor to obtain a characteristics curve, and calculating, with reference to the obtained characteristics curve, a variation of transconductance with respect to each of the gate voltages to obtain a transconductance variable curve. The transconductance variable curve is differentiated. A number of inflection points in a curve obtained by the differentiation is determined to indicate the abnormal condition of the MOS transistor.

REFERENCES:
patent: 5838164 (1998-11-01), Chen

Affiliated with

Also associated with

Rating

Method for automatic measurement of failure in subthreshold... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for automatic measurement of failure in subthreshold..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for automatic measurement of failure in subthreshold... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3846241