Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-09-28
2009-08-04
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S680000, C438S770000, C134S002000, C257SE21268
Reexamination Certificate
active
07569487
ABSTRACT:
A method for forming atomic layer deposition. The method includes placing a semiconductor substrate (e.g., wafer, LCD panel) including an upper surface in a chamber. The upper surface includes one or more carbon bearing species and a native oxide layer. The method includes introducing an oxidizing species into the chamber. The method includes treating the upper surface of the semiconductor substrate to remove the one or more carbon bearing species and form a particle film of silicon dioxide overlying the upper surface. The method includes introducing an inert gas into the chamber to purge the chamber of the oxidizing species and other species associated with the one or more carbon bearing species. A reducing species is introduced into the chamber to strip the particle film of silicon dioxide to create a substantially clean surface treated with hydrogen bearing species. The method includes performing another process (e.g., atomic layer deposition) on the substantially clean surface while the substrate is maintained in a vacuum environment. The substantially clean surface is substantially free from native oxide and carbon bearing particles.
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patent: 6806145 (2004-10-01), Haukka et al.
patent: 2005/0118782 (2005-06-01), Kim et al.
patent: 2005/0205010 (2005-09-01), Ferro et al.
patent: 2005/0239297 (2005-10-01), Senzaki et al.
Ritala and Leskela, “Atomic Later Deposition.”Handbook of Thin Film Materials, H.S. Nalwa, ed., vol. 1, Ch. 2, pp. 103-159. San Diego: Academic Press (2002).
Ghyka Alexander G
Semiconductor Manufacturing International (Shanghai) Corporation
Townsend and Townsend / and Crew LLP
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