Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Patent
1995-04-25
1997-06-03
Picardat, Kevin M.
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
438125, H01L 2160
Patent
active
056354274
ABSTRACT:
A module-type semiconductor device in which a plurality of IGBTs are incorporated in a package in such a way so as to provide a highly reliable pressure contact type semiconductor device having improved heat dissipation performance and small internal wiring inductance. A plurality of IGBTs are incorporated and arranged in a flat package with a hermetic structure consisting of common electrode plates exposed to top and bottom face sides, and an insulating outer frame interposed between the common electrodes plates and seal-joining those electrode plates. Contact terminal bodies which serve as both pressing members and heat radiators are interposed between the top-face-side common electrode plate and emitter electrodes of the respective opposing IGBT's. The emitter electrodes of the IGBTs and the common electrode, and the collector electrodes and the bottom-face-side common electrode, are directly brought in pressure contact with each other. Gate electrodes of the respective IGBTs are individually connected a gate wiring conductor located on an inner wall of an insulating outer frame by gate wire leads.
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Fuji Electric & Co., Ltd.
Picardat Kevin M.
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