Coating processes – Heat decomposition of applied coating or base material – Coating decomposed to form metal
Reexamination Certificate
2011-06-07
2011-06-07
Parker, Frederick J (Department: 1715)
Coating processes
Heat decomposition of applied coating or base material
Coating decomposed to form metal
C427S226000, C438S608000
Reexamination Certificate
active
07955645
ABSTRACT:
A semiconductor wafer (10) is structured such that fine structures (3), such as membranes, bridges or tongues, with a thickness d<<D are formed, wherein D designates the thickness of the semiconductor wafer (10). Then particles of a desired material are applied. A temporal or spatial temperature gradient is generated in the semiconductor wafer (10), e.g. by progressive heating. In such a heating process the fine structures heat up more quickly and become hotter than the remaining wafer because they have a smaller heat capacity per area and cannot carry off heat as quickly. In this manner, the fine structures can be heated to a temperature that allows a sintering of the particles. For coating the semiconductor wafer (10) is brought into a reactor (11). A precursor compound of a metal is provided and fed to the reactor (11), where a reaction takes place during which the metal is transformed to a final compound and is deposited in the form of particles on the semiconductor wafer (10).
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Kleinlogel Christoph
Mayer Felix
Cooper & Dunham LLP
Parker Frederick J
Sensirion AG
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