Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-05-04
2008-11-18
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S134000, C257S135000, C257S136000, C257S256000, C257S272000, C257S280000, C257S281000, C257S282000, C257S283000, C257S284000, C257S504000
Reexamination Certificate
active
07453107
ABSTRACT:
A semiconductor device includes a substrate of semiconductor material. A source region, a drain region, and a conducting region of the semiconductor device are formed in the substrate and doped with a first type of impurities. The conducting region is operable to conduct current between the drain region and the source region when the semiconductor device is operating in an on state. A gate region is also formed in the substrate and doped with a second type of impurities. The gate region abuts a channel region of the conducting region. A stress layer is deposited on at least a portion of the conducting region. The stress layer applies a stress to the conducting region along a boundary of the conducting region that strains at least a portion of the conducting region.
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Baker & Botts L.L.P.
DSM Solutions, Inc.
Soward Ida M
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