Method for application of gating signal in insulated double...

Details Method for application of gating signal in insulated double... Method for application of gating signal in insulated double...

2006-01-24

2006-01-24

Ton, My-Trang Nu (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

Reexamination Certificate

active

06989706

ABSTRACT:
In an insulated double gate FET, the threshold voltage during the operation of a transient response thereof is enabled to be arbitrarily and accurately controlled by a method that includes applying a first input signal intended to perform an ordinary logic operation to one of the gate electrodes thereof and applying, in response to this signal, a second signal that has a signal-level temporal-change direction as the first input signal and has at least one of the low level and the high level thereof shifted by a predetermined magnitude or endowed with a predetermined time difference or has the time slower or faster signal level change of the signal to the other gate electrode.

REFERENCES:
patent: 4275361 (1981-06-01), Schurmann
patent: 4564816 (1986-01-01), Kumar et al.
patent: 4611184 (1986-09-01), Kumar
patent: 5689144 (1997-11-01), Williams
patent: 6580293 (2003-06-01), Bernstein et al.
patent: 2571188 (1986-04-01), None
patent: 7-50785 (1995-05-01), None

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