Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE21294
Reexamination Certificate
active
08003431
ABSTRACT:
Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surface of the polycrystalline zinc oxide film is textured. Here, the roughening of the surface of the polycrystalline zinc oxide film comprises wet-etching the polycrystalline zinc oxide film on the substrate using an etching solution mixed with nitric acid and hydrogen peroxide.
REFERENCES:
patent: 4166919 (1979-09-01), Carlson
patent: 4450316 (1984-05-01), Hamakawa et al.
patent: 5078803 (1992-01-01), Pier et al.
patent: 5279679 (1994-01-01), Murakami et al.
patent: 7682882 (2010-03-01), Ryu et al.
patent: 2009/0101197 (2009-04-01), Morikawa
patent: 2009/0229664 (2009-09-01), Appadurai
patent: 2010/0288725 (2010-11-01), Sun et al.
patent: 0 371 582 (1990-06-01), None
patent: 02-158175 (1990-06-01), None
patent: 4305338 (2009-07-01), None
patent: 10-324450 (2002-01-01), None
Kim Jun Kwan
Lee Jae-min
Lim Jung-Wook
Yun Sun Jin
Electronics and Telecommunications Research Institute
Enad Christine
Rabin & Berdo P.C.
Smith Matthew
LandOfFree
Method for antireflection treatment of a zinc oxide film and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for antireflection treatment of a zinc oxide film and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for antireflection treatment of a zinc oxide film and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2705858