Method for annealing photovoltaic cells

Details Method for annealing photovoltaic cells Method for annealing photovoltaic cells

2011-05-03

2011-05-03

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S069000, C438S070000, C136S256000

Reexamination Certificate

active

07935562

ABSTRACT:
Method for annealing at least one photovoltaic cell comprising a substrate based on silicon with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell, at least one metallization on the front face of the cell and at least on metallization on a rear face of the substrate. This method comprises at least the steps of:a) a first annealing of the photovoltaic cell at a temperature between around 700° C. and 900° C.,b) a second annealing of the photovoltaic cell at a temperature between around 200° C. and 500° C., at ambient pressure and in ambient air,with hydrogen being diffused in the substrate during the process.

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