Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate
2006-03-21
2006-03-21
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step of heat treating...
C117S002000, C117S937000
Reexamination Certificate
active
07014703
ABSTRACT:
The invention is directed to a method for processing and annealing metal fluoride single crystals. Among other steps, the method includes of removing the as-grown surfaces of the crystals after they emerge from the growth furnace, processing the surfaces in such way that all the crystal surfaces have the same thermal properties, and then placing the crystals in a secondary annealing furnace to further anneal the crystals to release the residual stresses resulting from the primary annealing process. The invention is suitable for metal fluoride crystals of general formula MF2, where M is calcium, magnesium, barium and strontium, and mixtures thereof.
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CRC Handbook of Chemistry and Physics, 80thedition, CRC Press p. 4-48.
Corning Incorporated
Douglas Walter M.
Hiteshew Felisa
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