Method for annealing damaged semiconductor regions allowing for

Details Method for annealing damaged semiconductor regions allowing for Method for annealing damaged semiconductor regions allowing for

1997-02-14

1998-08-18

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

427259, 427264, 427270, 427272, 427282, 427299, 427384, 4274071, 4274192, 427526, 427527, 427529, 427555, 427558, 427596, 437 19, 437 20, 437228, C23C 1404

Patent

active

057956278

ABSTRACT:
A method of forming an oxide enhancing region, such as phosphorus, in a semiconductor substrate with minimal damage is provided. The method includes the steps of forming an oxide enhancing region in the semiconductor substrate to a depth below the semiconductor substrate. A 308 nm excimer laser is then applied to the oxide enhancing region in order to reduce the damage caused by forming the oxide enhancing region. A uniform and reliable oxide layer is then formed on the surface of the substrate over the damage reduced oxide enhancing region.

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patent: 4500365 (1985-02-01), Mori
patent: 4924278 (1990-05-01), Logie
patent: 5227329 (1993-07-01), Kobayashi et al.
patent: 5316969 (1994-05-01), Ishida et al.
patent: 5514880 (1996-05-01), Nishimura et al.
patent: 5620931 (1997-04-01), Tsang et al.

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