Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1995-06-02
1999-01-19
Garrett-Hiteshew, Felisa C.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
117 94, 117106, H02L 2336
Patent
active
058613374
ABSTRACT:
A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.
REFERENCES:
patent: 4309225 (1982-01-01), Fan et al.
patent: 4322253 (1982-03-01), Pankove et al.
patent: 4552595 (1985-11-01), Hoga
patent: 4576851 (1986-03-01), Iwamatsu
patent: 4589951 (1986-05-01), Kawamura
patent: 4609407 (1986-09-01), Masao et al.
patent: 4719123 (1988-01-01), Haku et al.
patent: 5234528 (1993-08-01), Nishi
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5314839 (1994-05-01), Mizutani et al.
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5372836 (1994-12-01), Imahashi et al.
Satoshi Takenaka, Masafumi Kunii, Hideaki OKA and Hajime Kurihara, "High Mobility Poly-Si Thin Film Transistors Using Solid Phase Crystallized a-Si Film Deposited by Plasma-Enhanced Chemical Vapor Deposition", published Dec. 1990, Japanese Journal of Applied Physics.
IEEE Transactions on Electron Devices, vol. 36, No. 12, Dec. 1989, Sera et al. "High-Performance TFT's Fabricated by XeC1 Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film", pp. 2868-2872.
Japanese Journal of Applied Physics, vol. 28, No. 10, Oct. 1989, pp. 1789-1793, "XeC1 Excimer Laser Annealing Used to Fabricate Poly-Si TFT's", Sameshima et al.
Kusumoto Naoto
Zhang Hongyong
Ferguson Jr. Gerald J.
Garrett-Hiteshew Felisa C.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method for annealing a semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for annealing a semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for annealing a semiconductor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1246389