Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1997-07-15
1999-08-24
Ballato, Josie
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
324765, G01R 3126
Patent
active
059429097
ABSTRACT:
A method for analyzing a Schottky junction includes the step of obtaining electrical field dependence of the Schottky barrier height which shows a degree of dependence of the Schottky barrier height of the Schottky junction formed on a semiconductor wafer on an electrical field applied to an interface of the Schottky junction in a case where a reverse bias is applied to the Schottky junction. The method includes the steps of: applying the reverse bias of a plurality of voltage values to the Schottky junction; measuring a plurality of current values of a current flowing through the Schottky junction and a plurality of capacitance values of the Schottky junction, corresponding to the reverse bias of the plurality of voltage values; obtaining current-voltage characteristics and capacitance-voltage characteristics of the Schottky junction based on the plurality of current values and the plurality of capacitance values; calculating depletion layer charge-voltage characteristics showing a correlation between an accumulated charge in a depletion layer and a voltage by integrating the capacitance-voltage characteristics with respect to a voltage; and obtaining the electrical field dependence of the Schottky barrier height based on the current-voltage characteristics and the depletion layer charge-voltage characteristics.
REFERENCES:
patent: 3731192 (1973-05-01), Miller
patent: 4675601 (1987-06-01), Zoutendyk et al.
patent: 5216264 (1993-06-01), Fujii et al.
Physics of Semiconductor Devices, 2.sup.nd edition; S.M. Sze: 1981 Chp 5.4, pp. 254-259; John Wiley & Sons, Inc. Printed in United States. No month available.
Control of Schottky Barrier Height Using Highly Doped Surface Layers; J.M. Shannon.: Solid-State Electronics, 1976 vol. 19, No. 6-H, pp. 537-543; Pergamon Press. Printed in Great Britain. No month available.
Barrier height lowering of Schottky contacts on AllnAs layers grown by metal-organic chemical-vapor deposition, Shinobu Fujuita, et al.: J. Appl. Phys. 73:3, Feb. 1, 1993; pp. 1284-1287.
The role of the metal-semiconductor interface in silicon integrated circuit technology, J. M. Andrews: J. Vac. Sci. Technol., 11:6, Nov./Dec. 1974; pp. 974-984.
Effect of thermionic-field emission on effective barrier height lowering in In.sub.0.52 Al.sub.0.48 As Schottky diodes; Unemoto, et al.: Appl Phys. Lett. 62:16, Apr. 19, 1993; pp. 1964-1966.
Ishimaru Yoshiteru
Shimizu Masafumi
Zhu Yu
Ballato Josie
Conlin David G.
Gamache Richard E.
Sharp Kabushiki Kaisha
Tang Minh
LandOfFree
Method for analyzing Schottky junction, method for evaluating se does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for analyzing Schottky junction, method for evaluating se, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for analyzing Schottky junction, method for evaluating se will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-470020