Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2008-03-25
2008-03-25
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
With measuring or testing
C438S476000, C134S013000, C134S010000
Reexamination Certificate
active
07348188
ABSTRACT:
Various kinds of metal elements existing on the surface of a wafer are analyzed with higher sensitivity. A high concentration HF solution is dropped onto a surface of a wafer. By providing the droplets of high concentration HF solution, the native oxide film on the surface of the wafer is dissolved into the solution, and the metal elements or compounds thereof existing in vicinity of the surface of the wafer are eliminated from the wafer and are incorporated into the high concentration HF solution. The droplets formed by agglomerating the high concentration HF solution are aggregated at a predetermined position on the surface of the wafer. Then, the recovered droplet of the high concentration HF solution is dried. The aggregated material is irradiated with X-ray at an angle for promoting total reflection, and the total reflection X-ray fluorescence spectrometry is conducted to detect the emitted X-ray.
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English translation of German Official Action regarding corresponding German application No. 10 2005 008 068.5-52, dated Sep. 28, 2006.
NEC Electronics Corporation
Schillinger Laura M.
Young & Thompson
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