Method for analyzing impurity

Chemistry: analytical and immunological testing – Process or composition for determination of physical state... – Corrosion resistance or power

Reexamination Certificate

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C436S005000

Reexamination Certificate

active

07601538

ABSTRACT:
This method for analyzing impurity includes: a step of immersing each of sets of two evaluation silicon wafers into a washing solution, thereby contaminating the evaluation silicon wafers to be in a same state of contamination; a step of dissolving each of a surface layer portion of either one of the evaluation silicon wafers and a bulk portion of the other evaluation silicon wafer with solutions including hydrofluoric acid respectively, and measuring a concentration of impurities included in each of the solutions; a step of determining a calibration curve that shows a relation between the concentrations of the impurities in the surface layer portions and the concentrations of the impurities in the bulk portions of the evaluation silicon wafers; a step of dissolving a surface layer portion of a silicon wafer of a test object with a solution including hydrofluoric acid, and measuring a concentration of impurities included in the solution; and a step of determining a concentration of impurities in a bulk portion based on the calibration curve using the measured concentration of the impurities.

REFERENCES:
patent: 5643404 (1997-07-01), Muraoka et al.
patent: 5810940 (1998-09-01), Fukazawa et al.
patent: 5913980 (1999-06-01), Bathey
patent: 6174740 (2001-01-01), Ohta et al.
patent: 2004/0248311 (2004-12-01), Mohammad et al.
patent: 07-130808 (1995-05-01), None
patent: 11-330043 (1999-11-01), None
patent: 2000-035424 (2000-02-01), None
Machine Translation of JP 11-330043, Masaki, Evaluation of Silicon Wafer, 1999.

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