Method for analyzing contamination within hole in semiconductor

Details Method for analyzing contamination within hole in semiconductor Method for analyzing contamination within hole in semiconductor

1997-03-27

1999-11-23

Gulakowski, Randy

Chemistry: analytical and immunological testing

Metal or metal containing

436 79, 436 83, 436 84, 436171, 134 13, 438 14, 438756, G01N 3320

Patent

active

059899190

ABSTRACT:
First and second semiconductor substrate samples formed with a first oxide layer with holes and a third semiconductor substrate sample formed with a second oxide layer having no hole are prepared. The first and the third samples are subject to the same contaminating process for contaminating the surface of the first oxide layer of the first sample and the surface within the hole, and the surface of the second oxide layer of the third sample. All of the first and second layers of the first to third samples are dissolved by the HF vapor. The dissolved solutions are collected and analyzed the amount of contaminating material contained in respective solutions. The contamination amount in the hole is derived from the first, second and third contamination amount from an equation:

REFERENCES:
patent: 4990459 (1991-02-01), Maeda et al.
patent: 5527707 (1996-06-01), Fukazawa
patent: 5686314 (1997-11-01), Miyazaki
patent: 5877027 (1999-03-01), Kemmochi et al.
patent: 5890501 (1999-04-01), Kaneko et al.
"A new Technique for Quantitative Analysis of Metallic Contamination inside Deep-Submicron-Diameter Holes", H. Aoki, pp. 154-156, Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, Yokohama, Dec. 1996.
Cleaning Technology of Surface of Silicon Wafer, p. 97, (Japanese language with English language translation) Nov. 1995.

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