Method for an automatic optical measuring of an OPC structure

Data processing: measuring – calibrating – or testing – Measurement system in a specific environment – Mechanical measurement system

Reexamination Certificate

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C702S158000, C356S237200

Reexamination Certificate

active

07460962

ABSTRACT:
The invention relates to a method for optical measurement of an OPC structure (306), having a pre-determined structure (302) on a photo-mask, in order to determine a measurement of the structure in at least one direction, whereby, firstly, a region (300) is determined on the photo-mask, which comprises the OPC structure (306) to be measured. The intensity of the determined region (300) is then scanned in a first direction and the region in which the intensity passes a threshold is determined for each scan. The maximum separation between an edge (308) of the structure (302) and an edge (312) of the corresponding OPC structure (306) is determined, based on the difference of the determined regions.

REFERENCES:
patent: 3879131 (1975-04-01), Cuthbert et al.
patent: 4633504 (1986-12-01), Wihl
patent: 6836560 (2004-12-01), Emery
patent: 7027143 (2006-04-01), Stokowski et al.
patent: 7123356 (2006-10-01), Stokowski et al.
patent: 101 33 846 (2002-05-01), None
patent: 1118727 (1999-04-01), None
patent: 03/025979 (2003-03-01), None
Chao, K-J., et al. “Metrology Issues of Reticles with Optical Proximity Correction Assist Features Using the Atomic Force Microscope”, Metrology, Inspection and Process Control for Microlithography XIV, Proceedings of the SPIE vol. 3998 2000.
Doe, N. et al. “Optical Proximity Effects in Sub-micron Photomask CD Metrology”, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents Proceedings of the SPIE vol. 3996 2002.
Matsuo, F., et al. “Pattern Shape Analysis tool for Defect Judgement of Photomask”, Photomask and Next generation Mask Technology VII; Proceedings of the SPIE, vol. 4066, 2000.
Fiekowsky, P., et al. “Mask Defect Disposition: Flux Area Measurement of Edge, Contact, and OPC Defects Correlates to Wafer and Enable Effective Decisions”, Paper 4409-10, Presented at Photomask Japan 2001, Apr. 2001.
Fiekowsky, et al.;Mask Defect Dispositon: Flux-Area Measurement of Edge, Contact, and OPC Defects Correlates to Wafer and Enables Effective Decisions; Apr. 2001; Presented at Photomask Japan 2001, Paper 4409-10.
Matsuo, et al.;Pattern Shape Analysis tool for Defect Judgement of Photomask; 2000; Photomask and Next-Generation Lithography Mask Technology VII, Proceedings of SPIE vol. 4066.

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