Method for altering the luminescence of a semiconductor

Details Method for altering the luminescence of a semiconductor Method for altering the luminescence of a semiconductor

1992-10-21

1999-01-12

Nold, Charles

Stock material or miscellaneous articles

Composite

Of inorganic material

428620, 428641, 428642, 437 17, 437 20, 437170, C25F 312

Patent

active

058585591

ABSTRACT:
A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.

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