Method for altering characteristics of junction semiconductor de

Details Method for altering characteristics of junction semiconductor de Method for altering characteristics of junction semiconductor de

1987-05-26

1989-04-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437957, H01L 21326

Patent

active

048206571

ABSTRACT:
Method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor material involves applying at least one pulse --a voltage pulse, a current pulse, an energy pulse, or a power pulse and so forth-- across the junction, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to alter the electrical characteristics of the junction, and thereby, the electrical characteristic of the circuit. The pulse is applied across the junction by applying it to at least one terminal or electrode which is contacted to the first or second semiconductor material. In addition, the amplitudes of the electrical parameters and time duration of the at least one pulse should be low enough to ensure that dendrites or filaments of material from the at least one electrode, for example, metal, are not formed in the first or second semiconductor material.

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patent: 3333326 (1967-08-01), Thomas, Jr. et al.
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patent: 3576549 (1971-04-01), Hess et al.
patent: 4534100 (1985-08-01), Lane
patent: 4606781 (1986-08-01), Vyne
patent: 4646427 (1987-03-01), Doyle

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