Method for altering characteristics of active semiconductor devi

Details Method for altering characteristics of active semiconductor devi Method for altering characteristics of active semiconductor devi

1988-01-19

1989-10-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437170, 437172, 437957, H01L 21326, H01L 2166

Patent

active

048747114

ABSTRACT:
Method for altering an electrical characteristic of a circuit having at least one active semiconductor device involves applying at least one pulse--a voltage pulse, a current pulse, an energy pulse, or a power pulse and so forth--across the active semiconductor device, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to alter the electrical characteristics of the device, and thereby, the electrical characteristic of the circuit. The pulse is applied across the junction by applying it to at least one terminal or electrode which is contacted to semiconductor material disposed within the device. In a preferred embodiment of the inventive method, the amplitudes of the electrical parameters and the time duration of the at least one pulse should be high enough to ensure that dendrites or filaments of material from the electrode are formed in the semiconductor material of the active semiconductor device but whose dendrites or filaments are not of a geometry to cause a short cricuit to be formed between any pair of electrodes of the active semiconductor device.

REFERENCES:
patent: 3742592 (1973-07-01), Rizzi et al.
patent: 3781977 (1974-01-01), Hulmes
patent: 4156926 (1979-05-01), Hartman
patent: 4387503 (1983-06-01), Aswell et al.
patent: 4507757 (1985-03-01), McElroy
patent: 4646427 (1987-03-01), Doyle
Vyne et al., IEEE Intl. Solid-State Circuits Conf. (1987), pp. 174, 175, 387, 388.

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