Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1996-12-18
1999-09-28
Dutton, Brian
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
H01L 2176
Patent
active
059602961
ABSTRACT:
This invention relates to method for forming a semiconductor device on a semiconductor wafer comprising the following steps:
forming a plurality of device layers each including a reference mark applied thereon;
forming a composite reference mark including one or more features from each of the reference marks applied on the layers which are to be aligned;
comparing the reference mark with the features of the marks applied on the or each layer to be aligned in order to identify when the alignment is attained; and
forming a next device layer aligned with two or more of said plurality of device layers.
REFERENCES:
patent: 5532091 (1996-07-01), Mizutani
patent: 5604354 (1997-02-01), Lauverjat
Auzino Luigi
Cangiano Agostino
Donaldson Richard L.
Dutton Brian
Kempler William B.
Texas Instruments Incorporated
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